Dr Ahmad Shuhaimi graduated Bachelor Degree in Electrical and Computer Engineering (B. Eng.) in 2005, Master Degree (M. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2007, and Doctorate Degree (D. Eng.) in Engineering Physics, Electronics and Mechanics (Electronics Major) in 2010, all from Nagoya Institute of Technology, Japan. His postgraduate research was focused on gallium nitride (GaN) – based semiconductor epitaxy by metal-organic chemical vapor deposition (MOCVD) and device fabrications, especially GaN-based light-emitting diodes (LED) grown on silicon (Si) substrate and GaN-based laser diodes (LD) grown on free-standing GaN substrate. Dr Ahmad Shuhaimi has obtained valuable experience in the realm of epitaxy and device fabrications under supervision of Professor Dr Takashi Egawa (one of the pioneers in gallium nitride epitaxy research). After joining Universiti Malaya in July 2010, Dr Ahmad Shuhaimi has been committed in setting up Malaysia's first MOCVD growth facility at Low Dimensional Materials Research Centre (LDMRC) University of Malaya, and optimizations of device fabrication process through many research grants provided by Ministry of Education (MoE) and others. His group interest is GaN-based epitaxy on polar and non-polar planes on sapphire, silicon and free-standing gallium nitride substrates for light-emission and power electronic devices.

Semiconductor Materials (Gallium Nitride, GaN, Indium Gallium Nitride, InGaN, Aluminum Gallium Nitride, AlGaN, Light Emitting Diode, LED, Laser Diode, LD, Multi-Quantum Well, MQW, Strained-Layer Superlattices, SLS).